PART |
Description |
Maker |
TBB1004 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB506MFS-TL-E BB506M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
DTC143EKAT146 |
Built-In Biasing Resistors, R1 = R2 = 4.7kW.
|
Rohm
|
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB501M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|